| PART |
Description |
Maker |
| MB86041A MB86043 |
(MB86041A / MB86043) CMOS Pipelined Divider
|
Fujitsu
|
| CD4040BMS CD4020BMS CD4024BMS FN3300 |
Couter/Divider, 12-Stage, Binary Ripple Carr, Rad-Hard, CMOS, Logic
Couter/Divider, 7-Stage, Binary Ripple Carr, Rad-Hard, CMOS, Logic
Counter/Divider, 14-Stage, Binary Ripple-Carry, Rad-Hard, CMOS, Logic
CMOS Ripple-Carry Binary Counter/Dividers
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UT6164C32 UT6164C32Q-6 UT6164C32T-6 |
64K X 32 SYNCHRONOUS PIPELINED BURST CMOS SRAM
|
UTRON Technology
ETC[ETC]
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| TC74HC4017AP07 TC74HC4017AP TC74HC4017AF |
CMOS Digital Integrated Circuit Silicon Monolithic Decade Counter/Divider
|
Toshiba Semiconductor
|
| AZP54VG |
Low Phase Noise Sine Wave/CMOS to LVPECL Buffer/Divider
|
Arizona Microtek, Inc
|
| MC100EL32 MC10EL32 MC10EL32D MC100EL32D ON0667 |
÷2 Divider
2 Dlvlder
From old datasheet system
±2 Divider
|
ONSEMI[ON Semiconductor]
Motorola
|
| ADP125 |
5.5V Input, 500 mA, Low Quiescent Current, CMOS Linear Regulator w/External Voltage Divider
|
Analog Devices
|
| UPD4482322GF-A44 UPD4482162GF-A44 UPD4482362GF-C60 |
(UPD4482162/2182/2322/2362) 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT
|
NEC[NEC]
|
